n-channel enhancement mode field symbol v ds v gs i dm t j , t stg symbol typ max 160 200 180 220 r jl 130 160 absolute maximum ratings t a =25c unless otherwise noted parameter maximum units v gate-source voltage 8 v i d 2.2 drain-source voltage 20 t a =25c p d 0.625 a t a =70c 1.75 pulsed drain current b 10 continuous drain current a t a =25c maximum junction-to-ambient a steady-state c/w w t a =70c 0.4 junction and storage temperature range -55 to 150 c power dissipation a maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w AO7408 features v ds (v) = 20v i d = 2.2 a (v gs = 4.5v) r ds(on) < 82m ? (v gs = 4.5v) r ds(on) < 95m ? (v gs = 2.5v) r ds(on) < 120m ? (v gs = 1.8v) the AO7408 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v, in the small sot323 footprint. it can be used for a wide variety of applications, including load switching, low current inverters and low current dc-dc converters. standard product AO7408 is pb-free (meets rohs & sony 259 specifications). AO7408l is a green product ordering option. AO7408 and AO7408l are electrically identical. g d s sc-70-6 (sot-323) to p vie w s g d d d d effect transistor general description www.freescale.net.cn 1 / 4
symbol min typ max units bv dss 20 v 1 t j =55c 5 i gss 100 na v gs(th) 0.4 0.6 0.8 v i d(on) 10 a 67 82 t j =125c 99 125 78 95 m ? 96 120 m ? g fs 6.7 s v sd 0.69 1 v i s 0.91 a c iss 499 pf c oss 65 pf c rss 56 pf r g 3 ? q g 6.02 nc q gs 0.41 nc q gd 1.35 nc t d(on) 6.5 ns t r 8ns t d(off) 61 ns t f 16 ns t rr 23.2 ns q rr 8.6 nc electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =16v, v gs =0v gate threshold voltage v ds =v gs i d =250 a a gate-body leakage current v ds =0v, v gs =8v r ds(on) static drain-source on-resistance v gs =4.5v, i d =2.2a m ? v gs =2.5v, i d =2.0a v gs =1.8v, i d =1a forward transconductance v ds =5v, i d =1.6a diode forward voltage i s =1a,v gs =0v gate drain charge maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =10v, f=1mhz output capacitance reverse transfer capacitance body diode reverse recovery charge i f =2.2a, di/dt=100a/ s turn-on delaytime v gs =5v, v ds =10v, r l =4.5 ? , r gen =6 ? turn-on rise time turn-off delaytime turn-off fall time v gs =4.5v, v ds =5v on state drain current body diode reverse recovery time i f =2.2a, di/dt=100a/ s gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =4.5v, v ds =10v, i d =2.2a gate source charge a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 2 : june 2005 n-channel enhancement mode field AO7408 effect transistor www.freescale.net.cn 2 / 4
typical electrical and thermal characteristics 0 4 8 12 16 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =1.5v 2v 2.5v 8v 3v 4.5v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v ds =5v 60 80 100 120 140 02468 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =1.8v v gs =2.5v v gs =4.5v 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =1.8v v gs =4.5v v gs =2.5v i d =2.0a i d =1.0a 60 80 100 120 140 160 180 12345678 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d =2.2a 25c 125c i d =2.2a n-channel enhancement mode field AO7408 effect transistor www.freescale.net.cn 3 / 4
typical electrical and thermal characteristic s 0 1 2 3 4 5 01234567 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0 4 8 12 16 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 1 0 m s 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c 10 s v ds =10v i d =2.2a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =360c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c t o n t p d t o n p d n-channel enhancement mode field AO7408 effect transistor www.freescale.net.cn 4 / 4
|
